AP2606AGY-HF Advanced Power Electronics Corp., AP2606AGY-HF Datasheet - Page 4

• Manufacturer Part Number: AP2606AGY-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2606AGY-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 7
• Pd(w): 2
• Configuration: Single N
• Package: SOT-26

AP2606AGY-HF
0.01
100
10
0.1
10
8
6
4
2
0
1
0.01
Fig 9. Maximum Safe Operating Area
0
Fig 11. Switching Time Waveform
10%
90%
Fig 7. Gate Charge Characteristics
I
V
Operation in this area
V
limited by R
D
Single Pulse
V
DS
T
=5A
GS
DS
A
=15V
=25
2
DS(ON)
V
Q
o
DS
0.1
C
t
G
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
4
t
r
6
1
8
t
d(off)
10
t
f
10
100ms
100us
10ms
1ms
DC
1s
100
12
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
0.001
0.01
600
500
400
300
200
100
0.1
0
0.0001
1
1
Fig 12. Gate Charge Waveform
4.5V
0.02
0.2
0.1
0.05
0.01
V
Single Pulse
Duty factor=0.5
G
0.001
5
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
10
= 156℃/W
t
j
= P
T
DM
f=1.0MHz
x R
100
25
thja
+ T
Q
C
C
C
a
oss
iss
rss
1000
29
4