AP2623GY Advanced Power Electronics Corp., AP2623GY Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2623GY

Manufacturer Part Number
AP2623GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2623GY

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
170
Rds(on) / Max(m?) Vgs@4.5v
280
Qg (nc)
2.8
Qgs (nc)
0.5
Qgd (nc)
1.4
Id(a)
-2
Pd(w)
1.2
Configuration
Dual P
Package
SOT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2623GY
Manufacturer:
Advanced
Quantity:
13 500
Part Number:
AP2623GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Low On-resistance
▼ Surface Mount Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
G1
1
3
3
S1
D1
G2
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
RoHS-compliant Product
D2
S2
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.01
SOT-26
-1.6
+20
-30
-20
1.2
DS(ON)
-2
DSS
D1
Value
110
S1
AP2623GY
D2
G1
170mΩ
S2
201101122
-30V
- 2A
Units
W/℃
℃/W
Unit
G2
W
V
V
A
A
A
1

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AP2623GY Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP2623GY RoHS-compliant Product BV -30V D2 DSS R 170mΩ DS(ON SOT-26 G1 ...

Page 2

... AP2623GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 10V G 1.6 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.6 1.2 o =25 C 0.8 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP2623GY - 150 C A -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP2623GY 10 V =-24V =- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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