AP2623GY Advanced Power Electronics Corp., AP2623GY Datasheet - Page 4

• Manufacturer Part Number: AP2623GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2623GY

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 170
• Rds(on) / Max(m?) Vgs@4.5v: 280
• Qg (nc): 2.8
• Qgs (nc): 0.5
• Qgd (nc): 1.4
• Id(a): -2
• Pd(w): 1.2
• Configuration: Dual P
• Package: SOT-26

AP2623GY
0.01
100
0.1
10
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
Single Pulse
V
V
T
GS
DS
A
V
I
=25
DS
D
-V
=-2A
=-24V
1
Q
o
DS
C
G
t
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
2
r
3
10
t
d(off)
t
4
f
100ms
10ms
1ms
DC
1s
100
5
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.02
0.001
0.01
Duty factor=0.5
G
0.05
0.1
5
0.2
Single Pulse
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
13
Q
G
Charge
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 180℃/W
t
j
= P
DM
T
f=1.0MHz
x R
100
thja
25
+ T
C
C
a
Q
C
oss
rss
iss
1000
29