AP30T03GH-HF Advanced Power Electronics Corp., AP30T03GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP30T03GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP30T03GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 4.5
• Qgs (nc): 1.2
• Qgd (nc): 2.9
• Id(a): 17
• Pd(w): 2
• Configuration: Single N
• Package: TO-252

50
40
30
20
10
60
50
40
30
20
10
0
8
6
4
2
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
V
V
DS
2.0
GS
SD
T
4
, Drain-to-Source Voltage (V)
0.4
j
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
T
C
=25
o
0.6
C
o
C
4.0
6
I
T
0.8
D
C
=8A
=25
T
o
1
C
j
6.0
=25
8
V
G
o
C
= 4.0 V
1.2
5.0V
7.0V
6.0V
10V
8.0
1.4
10
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
40
30
20
10
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
C
=10A
=10V
=150
1.0
v.s. Junction Temperature
Junction Temperature
T
V
o
j
C
DS
0
T
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2.0
AP30T03GH-HF
3.0
50
50
4.0
o
100
100
C)
V
o
G
5.0
C)
=4.0V
5.0V
7.0V
6.0V
10V
6.0
150
150
3