AP30T03GH-HF Advanced Power Electronics Corp., AP30T03GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP30T03GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP30T03GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 4.5
• Qgs (nc): 1.2
• Qgd (nc): 2.9
• Id(a): 17
• Pd(w): 2
• Configuration: Single N
• Package: TO-252

AP30T03GH-HF
100
10
10
1
0
8
6
4
2
0
0.1
Fig 11. Switching Time Waveform
0
Fig 9. Maximum Safe Operating Area
Fig 7. Gate Charge Characteristics
Single Pulse
90%
T
10%
V
V
C
DS
=25
GS
V
o
Q
V
C
I
DS
D
V
2
G
DS
t
d(on)
=8A
V
DS
,Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
=15V
DS
=18V
1
=24V
t
r
4
10
t
d(off)
6
t
f
100ms
100us
10ms
1ms
DC
100
8
Fig 10. Effective Transient Thermal Impedance
400
300
200
100
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.1
0.05
0.01
0.2
Duty factor = 0.5
V
Single Pulse
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
T
x R
f=1.0MHz
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
1
29
4