AP4501GM Advanced Power Electronics Corp., AP4501GM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4501GM

Manufacturer Part Number
AP4501GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
42
Qg (nc)
8.4
Qgs (nc)
1.4
Qgd (nc)
4.7
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
D1
SO-8
3
3
D2
D2
S1
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
+20
30
7.0
5.8
20
G1
-55 to 150
-55 to 150
Rating
0.016
2
R
I
R
I
D
D
D1
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
+20
-5.3
-4.7
-30
-20
G2
AP4501GM
28mΩ
50mΩ
201009015
-5.3A
-30V
Units
W/℃
℃/W
30V
Unit
7A
W
D2
V
V
A
A
A
S2
1

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AP4501GM Summary of contents

Page 1

... Data and specifications subject to change without notice RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 S1 N-channel 30 +20 3 7 Parameter 3 AP4501GM 30V DSS R 28mΩ DS(ON -30V DSS R 50mΩ DS(ON) I -5. Rating Units P-channel ...

Page 2

... AP4501GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... =- =-15V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-2.6A =-5A dI/dt=100A/µs AP4501GM Min. Typ. Max. Units - = = -25 = +100 - ...

Page 4

... AP4501GM N-Channel 20 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4501GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Single Pulse Duty factor = t/T -30 Peak ...

Page 6

... AP4501GM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics -4 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... DC Single Pulse 0.01 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4501GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

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