AP6923O Advanced Power Electronics Corp., AP6923O Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6923O

Manufacturer Part Number
AP6923O
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6923O

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
50
Rds(on) / Max(m?) Vgs@2.5v
85
Qg (nc)
15.6
Qgs (nc)
2.1
Qgd (nc)
5.2
Id(a)
-3.5
Pd(w)
1
Configuration
Single P
Package
TSSOP-8
▼ ▼ ▼ ▼ Low On-Resistance
▼ ▼ ▼ ▼ Fast Switching Characteristic
▼ ▼ ▼ ▼ Included Schottky Diode
Data and specifications subject to change without notice
V
V
V
I
I
I
I
I
P
T
T
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
F
FM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
DS
KA
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage (MOSFET and Schottky))
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Average Forward Current (Schottky)
Pulsed Forward Current
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Thermal Resistance Junction-ambient
Parameter
Parameter
1
(MOSFET)
1
3
3
(Schottky)
K
(MOSFET)
(MOSFET)
A
TSSOP-8
A
A
3
3
(MOSFET)
(Schottky)
D
S
S
P-CHANNEL WITH SCHOTTKY DIODE
POWER MOSFET
G
Max.
Max.
G
-55 to 150
-55 to 125
Rating
BV
R
I
D
- 3.5
- 2.8
± 12
- 30
-20
20
25
DS(ON)
1
1
1
DSS
Value
125
125
D
S
AP6923O
K
A
50mΩ
-3.5A
-20V
Units
℃/W
℃/W
200131025
Unit
W
W
V
V
V
A
A
A
A
A

Related parts for AP6923O

AP6923O Summary of contents

Page 1

... Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET TSSOP-8 D Parameter 3 (MOSFET) 3 (MOSFET) 1 (MOSFET) 1 (Schottky) Parameter 3 (MOSFET) 3 (Schottky) AP6923O BV -20V DSS R 50mΩ DS(ON) I -3. Rating Units -20 20 ± 3 ...

Page 2

... AP6923O Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I = -3. 1 1.0 0.7 0.4 - 1 0.6 0.3 0.8 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP6923O o T =150 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics I =-3. =-4. 100 Junction Temperature ( C) j Fig 4. Normalized On-Resistance v.s. Junction Temperature 0 50 ...

Page 4

... AP6923O 15 I =-3. =-10V DS V =-15V =-20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 (V) DS Fig 9. Maximum Safe Operating Area SCHOTTKY DIODE 10000 1000 V KA 100 ...

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