AP6923O Advanced Power Electronics Corp., AP6923O Datasheet - Page 4

• Manufacturer Part Number: AP6923O
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6923O

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Rds(on) / Max(m?) Vgs@2.5v: 85
• Qg (nc): 15.6
• Qgs (nc): 2.1
• Qgd (nc): 5.2
• Id(a): -3.5
• Pd(w): 1
• Configuration: Single P
• Package: TSSOP-8

SCHOTTKY DIODE
AP6923O
10000
1000
0.01
100
100
10
0.1
10
1
15
12
1
9
6
3
0
25
Fig 9. Maximum Safe Operating Area
0.1
0
Fig 7. Gate Charge Characteristics
I
Fig 1. Reverse Leakage Current
D
=-3.5A
Single Pulse
T
A
=25
4
Q
v.s. Junction Temperature
V
V
V
50
Junction Temperature (
G
o
DS
DS
DS
C
, Total Gate Charge (nC)
=-10V
=-15V
=-20V
1
-V
8
DS
(V)
75
V
KA
= 20V
12
10
100
o
V
C )
KA
16
100us
1ms
10ms
100ms
1s
DC
=10V
125
20
100
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
0.001
1000
0.01
0.01
100
0.1
0.1
10
1
0.0001
1
1
0
Duty Factor=0.5
0.1
0.2
0.05
0.02
0.01
Fig 2. Forward Voltage Drop
0.001
5
Single Pulse
V
0.2
F
t , Pulse Width (s)
- Forward Voltage Drop (V)
0.01
T
9
j
= 1 25
-V
DS
0.1
0.4
o
13
C
(V)
T
P
1
DM
17
Duty Factor = t/T
Peak T
R
j
thja
= 25
=208
j
0.6
= P
t
o
C/W
DM
o
T
x R
C
f=1.0MHz
10
21
thja
C
C
C
+ Ta
oss
iss
rss
0.8
100
25