AP6982GM Advanced Power Electronics Corp., AP6982GM Datasheet

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... Thermal Resistance Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO Parameter 3 AP6982GM Pb Free Plating Product CH-1 BV 30V DSS R 18mΩ DS(ON) I 8.5A D CH-2 BV 30V DSS R 26mΩ DS(ON Rating ...

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... AP6982GM CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... D V =24V DS V =4. =15V =3.3Ω, =15Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =1.7A =7A dI/dt=100A/µs AP6982GM Min. Typ. Max. Units 30 - =1mA - 0. =250uA ...

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... AP6982GM Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

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... Fig 8. Typical Capacitance Characteristics 1 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP6982GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T ...

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... AP6982GM Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

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... DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o =150 AP6982GM Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0.05 0.02 0.02 0. Single Pulse Duty factor = t/T Peak ...