AP6982GM Advanced Power Electronics Corp., AP6982GM Datasheet - Page 7

• Manufacturer Part Number: AP6982GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6982GM

• Vds: 30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 14
• Qgs (nc): 4
• Qgd (nc): 8
• Id(a): 8.5
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

Channel-2
0.01
100
0.1
16
12
40
30
20
10
10
8
4
0
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
I
DS
Single Pulse
D
T
= 7 A
=5V
A
T
V
=25
2
j
V
Q
DS
=25
5
GS
G
V
V
V
o
, Drain-to-Source Voltage (V)
DS
DS
DS
C
, Total Gate Charge (nC)
o
, Gate-to-Source Voltage (V)
C
1
=16V
=20V
=24V
4
10
T
j
6
=150
10
o
C
15
8
100ms
100us
10ms
1ms
10s
DC
1s
10
100
20
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.02
0.01
0.001
Single Pulse
G
Duty factor=0.5
0.1
0.05
0.2
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
Charge
17
1
AP6982GM
P
DM
Duty factor = t/T
Peak T
R
10
thja
21
=135
j
t
= P
o
C/W
f=1.0MHz
T
DM
100
x R
25
thja
Q
C
C
+ T
C
iss
rss
a
oss
1000
29