AP70T03AJ Advanced Power Electronics Corp., AP70T03AJ Datasheet - Page 3

• Manufacturer Part Number: AP70T03AJ
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03AJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 16.5
• Qgs (nc): 5
• Qgd (nc): 10.3
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-251

1000
100
0.1
200
150
100
10
60
40
20
50
1
0
0
0.0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
V
Tj=175
SD
V
o
Reverse Diode
V
DS
C
, Source-to-Drain Voltage (V)
GS
4
, Drain-to-Source Voltage (V)
o
, Gate-to-Source Voltage (V)
C
0.5
1.5
8
3.0
1
Tj=25
T
12
I
D
C
V
=25 ℃ ℃ ℃ ℃
=33A
GS
6.0V
o
8.0V
=4.0V
10V
C
4.5
1.5
16
120
1.6
1.2
0.8
0.4
2.5
1.5
0.5
90
60
30
0
2
1
2
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
D
GS
=175
=33A
=10V
v.s. Junction Temperature
Junction Temperature
T
o
V
T
C
j
DS
j
, Junction Temperature (
, Junction Temperature (
1.5
, Drain-to-Source Voltage (V)
25
25
AP70T03AH/J
3.0
100
100
V
o
o
C )
GS
C)
8.0V
6.0V
10V
=4.0V
175
4.5
175