AP70T03AJ Advanced Power Electronics Corp., AP70T03AJ Datasheet - Page 4

• Manufacturer Part Number: AP70T03AJ
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03AJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 16.5
• Qgs (nc): 5
• Qgd (nc): 10.3
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-251

AP70T03AH/J
1000
100
10
12
1
9
6
3
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
T
10%
V
90%
C
V
I
=25
DS
D
GS
V
=33A
DS
o
Q
C
, Drain-to-Source Voltage (V)
G
t
V
V
V
d(on)
, Total Gate Charge (nC)
DS
DS
DS
10
1
=16V
=20V
=24V
t
r
20
10
t
d(off)
t
f
10us
100us
1ms
10ms
100ms
DC
100
30
Fig10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
Single Pulse
0.02
G
Duty Factor = 0.5
0.05
0.2
0.1
0.0001
V
Q
DS
8
GS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
Charge
G
GD
15
0.01
P
DM
Duty Factor = t/T
Peak T
22
j
= P
t
0.1
DM
T
f=1.0MHz
x R
thjc
+ T
Ciss
Coss
Crss
Q
C
29
1