AP70T03GI Advanced Power Electronics Corp., AP70T03GI Datasheet - Page 3

• Manufacturer Part Number: AP70T03GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GI

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 17
• Qgs (nc): 5
• Qgd (nc): 10
• Id(a): 60
• Pd(w): 37.5
• Configuration: Single N
• Package: TO-220CFM

200
160
120
40
30
20
10
25
21
17
13
80
40
0
9
5
0
Fig 3. On-Resistance v.s. Gate Voltage
2
0
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
V
V
=25
V
T
SD
Reverse Diode
DS
GS
j
=175
0.4
4
1
, Source-to-Drain Voltage (V)
o
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
C
o
C
0.8
6
2
T
I
D
C
=25
= 20 A
T
o
j
C
=25
1.2
8
3
o
V
C
G
=4.0V
8.0V
6.0V
10V
1.6
10
4
2.0
1.6
1.2
0.8
0.4
2.6
2.2
1.8
1.4
0.6
120
100
80
60
40
20
1
0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
I
V
C
D
G
=175
=33A
=10V
0.31
V
v.s. Junction Temperature
Junction Temperature
0
0
o
1
DS
T
C
T
j
, Drain-to-Source Voltage (V)
j
,Junction Temperature (
, Junction Temperature (
50
50
2
100
100
3
AP70T03GI
o
o
150
150
C)
V
4
C)
G
=4.0V
t
Q
8.0V
6.0V
rr
10V
rr
200
200
5
3