AP70T03GI Advanced Power Electronics Corp., AP70T03GI Datasheet - Page 4

• Manufacturer Part Number: AP70T03GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GI

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 17
• Qgs (nc): 5
• Qgd (nc): 10
• Id(a): 60
• Pd(w): 37.5
• Configuration: Single N
• Package: TO-220CFM

AP70T03GI
1000
100
12
10
10
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Single Pulse
90%
T
10%
V
I
V
C
D
DS
GS
=25
= 33 A
4
V
o
DS
Q
C
V
t
G
d(on)
, Drain-to-Source Voltage (V)
DS
V
, Total Gate Charge (nC)
=16V
8
1
DS
V
=20V
t
DS
r
=24V
12
16
10
t
d(off)
t
100ms
100us
f
10ms
20
1ms
DC
1s
24
100
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
4.5V
0.01
V
0.02
Single Pulse
G
0.1
0.05
0.0001
5
0.2
Duty factor=0.5
0.31
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
t
Q
C
+ T
C
Q
rr
iss
C
oss
rss
rr
10
29
4