AP72T02GJ-HF Advanced Power Electronics Corp., AP72T02GJ-HF Datasheet - Page 3

• Manufacturer Part Number: AP72T02GJ-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP72T02GJ-HF

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 13
• Qgs (nc): 2.7
• Qgd (nc): 9
• Id(a): 62
• Pd(w): 60
• Configuration: Single N
• Package: TO-251

180
120
60
30
20
10
35
25
15
0
5
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
T
VGS , Gate-to-Source Voltage (V)
V
Reverse Diode
V
j
=175
DS
SD
2
4
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
C
T
0.6
C
=25
4
6
o
0.8
T
C
I
C
D
=25
=15A
o
1
C
6
T
8
V
j
=25
G
1.2
=3.0V
7.0V
5.0V
4.5V
10V
o
C
1.4
8
10
120
1.8
1.2
0.6
0.0
1.8
1.4
0.6
80
40
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=30A
=10V
v.s. Junction Temperature
V
Junction Temperature
0
0
DS
T
T
2
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
50
50
AP72T02GH/J-HF
T
C
=175
4
100
100
o
C
6
o
o
150
150
C)
C )
V
G
=3.0V
7.0V
5.0V
4.5V
10V
200
200
8
3