AP7811GM Advanced Power Electronics Corp., AP7811GM Datasheet
AP7811GM
Specifications of AP7811GM
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AP7811GM Summary of contents
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... Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP7811GM Pb Free Plating Product BV 25V DSS R 12mΩ DS(ON) I 11. Rating Units 25 ±12 11.8 9 ...
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... AP7811GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... GS Fig 3. On-Resistance v.s. Gate Voltage 30 4.5V 3.5V 3.0V 2. =2. 2.5 3 Fig 2. Typical Output Characteristics 1.80 I =11. =25 C 1.60 C 1.40 1.20 1.00 0.80 0.60 - Fig 4. Normalized On-Resistance AP7811GM o T =150 C C 0 Drain-to-Source Voltage ( =11. =4. Junction Temperature ( j v.s. Junction Temperature 4.5V 3.5V 3.0V 2.5V V =2.0V GS 2.5 3 100 150 o C) ...
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... AP7811GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 2.5 1.5 0.5 100 125 150 o C) 1ms 10ms 100ms 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance ...
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... 1.00 0.10 0.01 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 1.6 1.4 1 0.8 0.6 0.4 0.2 1.1 1.3 1.5 AP7811GM ( Junction Temperature ( Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 100 150 C ) ...
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... AP7811GM Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...