AP7811GM Advanced Power Electronics Corp., AP7811GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP7811GM

Manufacturer Part Number
AP7811GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP7811GM

Vds
25V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
12
Qg (nc)
32
Qgs (nc)
2.6
Qgd (nc)
15.5
Id(a)
11.8
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP7811GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP7811GM
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Forward On Voltage
2
copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
j
=11.8A
=1.5A
G
D
=25℃, I
=V
=10Ω
=3.3Ω,V
=V
=15V, I
=25V, V
=20V, V
=20V
=15V
=20V
=0V, I
=4.5V, I
=
=5V
=0V
G
±12V
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
D
=250uA
D
=2.3A, V
D
=250uA
GS
GS
GS
=11.8A
=11.8A
=5V
=0V
=0V
S
=1.2V
GS
D
=1mA
=0V
Min.
Min.
0.5
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
15.5
Typ.
800
460
215
0.1
2.6
10
30
32
12
28
41
40
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
2.08
1.2
1.2
12
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V

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