AP85U03GH-HF Advanced Power Electronics Corp., AP85U03GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP85U03GH-HF

Manufacturer Part Number
AP85U03GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP85U03GH-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
5.5
Rds(on) / Max(m?) Vgs@4.5v
12
Qg (nc)
41.5
Qgs (nc)
7.3
Qgd (nc)
27
Id(a)
75
Pd(w)
60
Configuration
Single N
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP85U03GH-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
5
-55 to 175
-55 to 175
Rating
BV
R
I
D
0.48
28.8
+20
220
AP85U03GH-HF
30
75
56
60
DS(ON)
DSS
G
Value
62.5
2.5
110
D
S
TO-252(H)
5.5mΩ
201010256
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
75A
mJ
W
V
V
A
A
A
1

Related parts for AP85U03GH-HF

AP85U03GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP85U03GH-HF Halogen-Free Product BV 30V DSS R 5.5mΩ DS(ON) I 75A □ S TO-252(H) ...

Page 2

... AP85U03GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... G 0 8.0 0.0 Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP85U03GH- =175 C 10V C 7 .0V 5.0V 4 =3.0V G 2.0 4 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP85U03GH- =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords