AP85U03GH-HF Advanced Power Electronics Corp., AP85U03GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP85U03GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85U03GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 5.5
• Rds(on) / Max(m?) Vgs@4.5v: 12
• Qg (nc): 41.5
• Qgs (nc): 7.3
• Qgd (nc): 27
• Id(a): 75
• Pd(w): 60
• Configuration: Single N
• Package: TO-252

200
160
120
80
40
14
12
10
50
40
30
20
10
0
8
6
4
2
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
V
Reverse Diode
GS
V
DS
2.0
T
0.4
4
SD
, Gate-to-Source Voltage (V)
T
j
, Drain-to-Source Voltage (V)
=175
C
, Source-to-Drain Voltage (V)
=25
o
o
C
C
4.0
0.8
6
I
T
D
C
=30A
=25
T
j
=25
o
C
6.0
1.2
8
o
C
V
G
7.0 V
4.5 V
= 3.0 V
5.0V
10V
8.0
1.6
10
100
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=40A
=10V
v.s. Junction Temperature
Junction Temperature
V
0
T
0
DS
j
T
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2.0
T
50
50
C
=175
AP85U03GH-HF
o
C
100
100
4.0
o
V
C)
G
150
o
150
C)
=3.0V
7 .0V
5.0V
4.5 V
10V
6.0
200
200
3