AP85U03GMT-HF Advanced Power Electronics Corp., AP85U03GMT-HF Datasheet - Page 3

• Manufacturer Part Number: AP85U03GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85U03GMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 10
• Qg (nc): 29
• Qgs (nc): 6.4
• Qgd (nc): 19
• Id(a): 82
• Pd(w): 50
• Configuration: Single N
• Package: PMPAK 5x6

200
160
120
80
40
14
12
10
40
30
20
10
0
8
6
4
2
0
0.0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
Fig 5. Forward Characteristic of
V
V
Reverse Diode
T
DS
GS
V
2.0
j
0.4
4
=150
SD
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
C
, Source-to-Drain Voltage (V)
=25
o
C
o
C
4.0
0.8
6
I
T
D
C
=20A
=25
T
j
=25
o
C
6.0
1.2
8
o
C
V
G
7.0 V
4.5 V
= 3.0 V
5.0V
10V
8.0
1.6
10
100
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
-50
0.0
Fig 4. Normalized On-Resistance
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=20A
=10V
v.s. Junction Temperature
Junction Temperature
V
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
2.0
T
AP85U03GMT-HF
C
=150
50
50
o
C
4.0
100
V
100
o
G
o
C)
C)
=3.0V
7 .0V
5.0V
4.5 V
10V
6.0
150
150
3