AP85U03GMT-HF Advanced Power Electronics Corp., AP85U03GMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP85U03GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85U03GMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 10
• Qg (nc): 29
• Qgs (nc): 6.4
• Qgd (nc): 19
• Id(a): 82
• Pd(w): 50
• Configuration: Single N
• Package: PMPAK 5x6

AP85U03GMT-HF
1000
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
90%
Single Pulse
V
T
I
Operation in this
area limited by
V
D
C
GS
R
DS
=30A
=25
DS(ON)
o
V
Q
C
0.1
20
DS
t
G
V
d(on)
V
,Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
V
DS
=15V
DS
=18V
t
r
=24V
40
1
t
d(off)
60
10
t
f
100ms
100us
10ms
1ms
DC
80
100
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
Duty factor = 0.5
0.02
V
0.1
0.05
0.01
0.2
G
5
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= PDM x R
t
0.1
T
f=1.0MHz
25
thjc
+ T
Q
C
C
C
c
iss
oss
rss
1
29
4