AP92T03GS Advanced Power Electronics Corp., AP92T03GS Datasheet - Page 4

• Manufacturer Part Number: AP92T03GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP92T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4
• Rds(on) / Max(m?) Vgs@4.5v: 5.2
• Qg (nc): 45
• Qgs (nc): 6
• Qgd (nc): 26
• Id(a): 80
• Pd(w): 89
• Configuration: Single N
• Package: TO-263

AP92T03GS/P
1000
100
10
280
240
200
160
120
14
12
10
80
40
1
0
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 11. Transfer Characteristics
V
Fig 7. Gate Charge Characteristics
T
Single Pulse
DS
I
C
D
=5V
=25
= 40 A
20
1
V
V
o
DS
C
V
DS
Q
V
GS
, Drain-to-Source Voltage (V)
G
DS
= 12 V
V
, Total Gate Charge (nC)
DS
, Gate-to-Source Voltage (V)
= 16 V
1
40
2
= 20 V
T
j
=25
60
3
o
C
10
80
4
T
j
=150
100
100us
1ms
10ms
100ms
1s
DC
5
o
C
120
100
6
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 12. Gate Charge Waveform
4.5V
V
G
Duty factor=0.5
5
0.1
0.02
0.2
0.05
0.01
Single Pulse
V
0.0001
Q
DS
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
C
C
C
C
oss
rss
iss
1
29
4