AP9410AGM-HF Advanced Power Electronics Corp., AP9410AGM-HF Datasheet - Page 3

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9410AGM-HF

Manufacturer Part Number
AP9410AGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9410AGM-HF

Vds
30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
5
Rds(on) / Max(m?) Vgs@4.5v
5.5
Rds(on) / Max(m?) Vgs@2.5v
8
Qg (nc)
28
Qgs (nc)
3
Qgd (nc)
12.5
Id(a)
18
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9410AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
160
120
80
40
40
30
20
10
10
0
0
8
6
4
2
0.0
0
1
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
T
V
j
Reverse Diode
=150
V
DS
V
4.0
GS
SD
2
, Drain-to-Source Voltage (V)
0.4
, Gate-to-Source Voltage (V)
T
o
, Source-to-Drain Voltage (V)
C
A
=25
0.6
o
C
8.0
3
I
T
0.8
D
A
=6A
=25
T
j
o
=25
C
1
12.0
4
o
C
V
G
1.2
=2.0V
5.0V
4.5V
3.5V
2.5V
16.0
1.4
5
120
100
1.8
1.6
1.4
1.2
0.8
0.6
1.5
0.5
80
60
40
20
0
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=12A
=10V
2
v.s. Junction Temperature
Junction Temperature
V
DS
T
T
j
0
0
j
, Drain-to-Source Voltage (V)
T
, Junction Temperature (
, Junction Temperature (
A
4
=150
o
AP9410AGM-HF
C
50
50
6
8
100
100
o
o
C)
V
C)
G
10
= 2.0V
5.0V
4.5V
3.5V
2.5V
150
150
12
3

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