AP9410AGM-HF Advanced Power Electronics Corp., AP9410AGM-HF Datasheet - Page 4

• Manufacturer Part Number: AP9410AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9410AGM-HF

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 5
• Rds(on) / Max(m?) Vgs@4.5v: 5.5
• Rds(on) / Max(m?) Vgs@2.5v: 8
• Qg (nc): 28
• Qgs (nc): 3
• Qgd (nc): 12.5
• Id(a): 18
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP9410AGM-HF
0.01
100
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
I
Operation in this
area limited by
V
90%
10%
D
Single Pulse
DS
V
T
= 12 A
R
DS
DS(ON)
=15V
A
GS
=25
V
10
Q
DS
o
0.1
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
20
r
1
30
t
d(off)
10
t
40
f
100ms
100us
10ms
1ms
DC
1s
100
50
Fig 10. Effective Transient Thermal Impedance
4000
3000
2000
1000
0.001
0.01
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
G
0.001
5
Duty factor =0.5
0.02
0.01
0.05
0.1
0.2
Q
Single pulse
V
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthia=125 ℃/W
21
10
j
= P
t
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
4