AP2605GY0-HF Advanced Power Electronics Corp., AP2605GY0-HF Datasheet

AP2605GY0-HF

Manufacturer Part Number
AP2605GY0-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2605GY0-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
80
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
6.5
Qgs (nc)
1.6
Qgd (nc)
3
Id(a)
-4
Pd(w)
2
Configuration
Single P
Package
SOT-26
▼ ▼ ▼ ▼ Fast Switching Characteristic
▼ ▼ ▼ ▼ Lower Gate Charge
▼ ▼ ▼ ▼ Small Footprint & Low Profile Package
▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
D
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
+ 20
SOT-26
-30
-20
DS(ON)
-4
-3
2
AP2605GY0-HF
DSS
Value
D
62.5
D
S
D
D
80mΩ
201111011
-30V
Units
℃/W
-4A
Unit
G
W
V
V
A
A
A
1

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AP2605GY0-HF Summary of contents

Page 1

... Storage Temperature Range STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter Parameter 3 AP2605GY0-HF Halogen-Free Product BV -30V D DSS R 80mΩ DS(ON SOT-26 ...

Page 2

... AP2605GY0-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D =-4. -10V 1.6 o =25 C 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1 -250uA 0.5 0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP2605GY0-HF o -10V -7.0V -6.0V -5. -4.0V 65mΩ Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+08 0 ...

Page 4

... AP2605GY0- - -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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