AP4511GH Advanced Power Electronics Corp., AP4511GH Datasheet - Page 4

• Manufacturer Part Number: AP4511GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 15
• Pd(w): 10.4
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
AP4511GH
50
40
30
20
10
45
40
35
30
25
20
0
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
0.2
V
GS
T
Reverse Diode
V
1
DS
j
SD
=150
, Gate-to-Source Voltage (V)
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
o
T
C
C
2
= 25
0.6
o
6
C
3
T
0.8
I
C
D
=25
= 6 A
T
8
j
=25
V
o
4
C
G
1
=3.0V
o
C
7.0V
5.0V
4.5V
10V
1.2
5
10
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.1
0.8
0.5
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
= 8 A
C
=10V
= 150
V
v.s. Junction Temperature
T
Junction Temperature
1
T
DS
j
, Junction Temperature (
o
0
j
0
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
o
100
100
C)
o
C)
4
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
4