AP4513GM-HF Advanced Power Electronics Corp., AP4513GM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4513GM-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GM-HF

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4513GM-HF
30
20
10
95
85
75
65
55
0
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0
0
Fig 5. Forward Characteristic of
T
A
=25
0.2
T
-V
1
j
Reverse Diode
-V
o
=150
-V
GS
C
DS
4
SD
, Gate-to-Source Voltage (V)
0.4
o
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
2
0.6
3
6
0.8
T
I
4
A
T
D
=25
1
= -2 A
j
=25
8
V
o
C
o
G
5
C
1.2
= - 3.0V
- 7.0V
- 5.0V
- 4.5V
- 10V
1.4
6
10
1.8
1.4
1.0
0.6
30
20
10
1.5
1.1
0.7
0.3
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
I
V
D
= 150
G
= -4 A
1
= - 10V
-V
v.s. Junction Temperature
Junction Temperature
T
DS
o
T
j
0
0
C
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
3
50
4
100
100
o
V
C)
o
G
C)
= - 3.0V
5
- 7.0V
- 5.0V
- 4.5V
- 10V
150
6
150
6