AP9477GM Advanced Power Electronics Corp., AP9477GM Datasheet

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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9477GM Pb Free Plating Product BV 60V DSS R 90mΩ DS(ON Rating Units 60 ±25 4 3.1 20 2.5 0.02 W/℃ ...

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... AP9477GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... D 1.8 =25 ℃ ℃ ℃ ℃ 1.6 1.4 1.2 1.0 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1.5 1.2 o =25 C 0.9 0.6 0.3 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9477GM o C 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage (V) DS =10V 0 50 100 Junction Temperature ( 100 Junction Temperature ( ...

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... AP9477GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 0 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...