AP9477GM Advanced Power Electronics Corp., AP9477GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9477GM

Manufacturer Part Number
AP9477GM
Description
The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9477GM

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
90
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
4
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9477GM
Quantity:
2 073
Part Number:
AP9477GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP9477GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=2A, V
=4A,
=4A
=1A
=3.3Ω,V
=30Ω
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=60V, V
=48V, V
=±25V
=48V
=4.5V
=30V
=0V
=25V
GS
V
Test Conditions
Test Conditions
GS
, I
GS
D
D
=250uA
=0V
D
D
=0
D
=250uA
GS
GS
GS
=4A
=4A
=3A
V
=0V
=0V
=10V
,
D
=1mA
Min.
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.04
Typ.
510
1.4
16
55
35
27
32
6
6
2
3
6
5
3
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
120
810
1.2
90
10
25
10
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
Ω
ns
V
V
S
V

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