AP4569GM Advanced Power Electronics Corp., AP4569GM Datasheet

AP4569GM

Manufacturer Part Number
AP4569GM
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4569GM

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
7
Qgs (nc)
1.2
Qgd (nc)
3.4
Id(a)
5.8
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4569GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Thermal Resistance Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
D1
D1
SO-8
3
3
D2
D2
3
S1
G1
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
40
5.8
4.6
20
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
0.016
2
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
-4.2
-3.4
±20
-40
-20
G2
AP4569GM
200628063-1/7
36mΩ
68mΩ
-4.2A
-40V
5.8A
Units
W/℃
℃/W
40V
Unit
W
V
V
A
A
A
D2
S2

Related parts for AP4569GM

AP4569GM Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4569GM Pb Free Plating Product N-CH BV 40V DSS R 36mΩ DS(ON) I 5.8A D P-CH BV -40V DSS R 68mΩ DS(ON) I -4. ...

Page 2

... AP4569GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V =±20V =- =-30V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.5A =-4A dI/dt=-100A/µs AP4569GM Min. Typ. =-10mA -40 - =-1mA - -0. =-250uA - 1 =-10V ...

Page 4

... AP4569GM N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4569GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak T ...

Page 6

... AP4569GM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 170 I T 140 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4569GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak T ...

Related keywords