AP4569GM Advanced Power Electronics Corp., AP4569GM Datasheet - Page 7

• Manufacturer Part Number: AP4569GM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4569GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
12
10
20
15
10
10
8
6
4
2
0
1
5
0
0.0
0.1
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
V
Single Pulse
DS
T
=-5V
A
-V
-V
=25
Q
4.0
DS
GS
G
V
I
o
, Total Gate Charge (nC)
T
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2
1
D
C
j
=-4A
=-30V
=25
o
C
8.0
T
j
10
4
=150
12.0
o
C
100ms
10ms
1ms
10s
DC
1s
16.0
100
6
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.01
0.05
0.02
G
0.2
0.1
Single Pulse
5
0.001
-V
Q
GS
DS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
GD
0.1
Charge
17
1
P
AP4569GM
DM
Duty factor = t/T
Peak T
R
thja
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
10
x R
25
thja
Q
+ T
C
C
C
a
oss
rss
iss
100
29
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