AP6906GH-HF Advanced Power Electronics Corp., AP6906GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP6906GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6906GH-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 40
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 5
• Id(a): 16.4
• Pd(w): 3
• Configuration: Dual N
• Package: SDPAK

AP6906GH-HF
40
30
20
10
60
50
40
30
0
10
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
V
V
DS
GS
SD
2
4
, Drain-to-Source Voltage (V)
,Gate-to-Source Voltage (V)
T
, Source-to-Drain Voltage (V)
T
0.4
j
=150
A
= 25
o
C
o
0.6
4
6
C
I
T
D
A
= 4 A
=25
0.8
o
C
6
T
8
j
V
=25
GS
1
o
=4.0V
C
7.0V
6.0V
5.0V
10V
10
8
1.2
2.0
1.6
1.2
0.8
0.4
30
20
10
1.8
1.4
0.6
0.2
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
A
= 6 A
=10V
= 150
1
v.s. Junction Temperature
Junction Temperature
V
T
T
DS
o
j
0
0
C
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
3
4
100
100
o
o
V
C)
C)
GS
5
=4.0V
5.0V
7.0V
6.0V
10V
150
150
6
3