AP6906GH-HF Advanced Power Electronics Corp., AP6906GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP6906GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6906GH-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 40
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 5
• Id(a): 16.4
• Pd(w): 3
• Configuration: Dual N
• Package: SDPAK

0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
Operation in this area
Single Pulse
V
limited by R
V
T
GS
A
DS
=25
V
DS(ON)
DS
o
Q
C
0.1
4
t
G
, Drain-to-Source Voltage (V)
d(on)
V
, Total Gate Charge (nC)
I
DS
D
= 6 A
= 48 V
t
r
1
8
t
d(off)
10
12
t
f
100ms
100us
10ms
1ms
DC
1s
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
800
600
400
200
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
Single Pulse
Duty factor=0.5
0.05
0.001
G
0.1
0.2
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
Charge
AP6906GH-HF
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
=75
j
= P
o
t
C/W
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
4