AP9960GD Advanced Power Electronics Corp., AP9960GD Datasheet
AP9960GD
Specifications of AP9960GD
Related parts for AP9960GD
AP9960GD Summary of contents
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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP Parameter Parameter 3 AP9960GD Pb Free Plating Product BV 40V DSS R 25mΩ DS(ON Rating Units 40 ± 5 0.016 W/℃ ...
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... AP9960GD Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... =25 ℃ ℃ ℃ ℃ 1.4 0.8 0 -50 Fig 4. Normalized On-Resistance 3 1.5 1 0.5 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9960GD o T =150 C 10V A 6.0V 5.0V 4.5V V =4. Drain-to-Source Voltage (V) DS =7.0A =10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature ...
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... AP9960GD 12 I =7. =12V =16V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...