AP9960GD Advanced Power Electronics Corp., AP9960GD Datasheet - Page 3

• Manufacturer Part Number: AP9960GD
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9960GD

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 14.7
• Qgs (nc): 7.1
• Qgd (nc): 6.8
• Id(a): 7
• Pd(w): 2
• Configuration: Dual N
• Package: PDIP-8

0.01
0.1
80
60
40
20
10
36
24
12
0
1
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
Tj=150
V
V
V
Reverse Diode
DS
4
SD
GS
1
o
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
, Gate-to-Source Voltage (V)
0.4
T
A
6
=25
2
o
C
8
0.8
Tj=25
I
T
3
V
D
A
=7.0A
10
GS
=25 ℃ ℃ ℃ ℃
6.0V
5.0V
4.5V
10V
=4.0V
o
C
4
1.2
12
32
24
16
1.4
0.8
0.2
3.5
2.5
1.5
0.5
8
0
2
3
2
1
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
Fig 4. Normalized On-Resistance
I
V
D
GS
Junction Temperature
V
=7.0A
v.s. Junction Temperature
T
=10V
DS
T
j
j
1
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
A
=150
50
50
2
o
C
AP9960GD
100
100
3
o
V
C)
o
C )
GS
6.0V
5.0V
4.5V
10V
=4.0V
150
150
4