AP9973GI Advanced Power Electronics Corp., AP9973GI Datasheet - Page 3

• Manufacturer Part Number: AP9973GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GI

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 14
• Pd(w): 25
• Configuration: Single N
• Package: TO-220CFM

40
30
20
10
16
12
90
80
70
60
0
8
4
0
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
0.2
=25
1
V
V
V
DS
SD
Reverse Diode
o
GS
C
T
0.4
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
, Gate-to-Source Voltage (V)
=150
2
0.6
o
C
0.8
6
3
T
I
C
D
=25
= 9 A
1
4
o
C
T
1.2
j
8
=25
V
G
=3.0V
5
o
1.4
C
7.0V
5.0V
4.5V
10V
1.6
10
6
2.0
1.6
1.2
0.8
0.4
1.8
1.6
1.4
1.2
0.8
30
20
10
0
2
1
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
I
V
D
C
G
=9A
=150
=10V
1
0.31
V
v.s. Junction Temperature
Junction Temperature
DS
o
T
C
T
0
0
j
, Drain-to-Source Voltage (V)
j
,Junction Temperature (
, Junction Temperature (
2
50
3
50
4
AP9973GI
100
100
o
V
o
C)
G
C)
5
=3.0V
t
Q
7.0V
5.0V
4.5V
10V
rr
rr
150
6
150
3