AP9973GI Advanced Power Electronics Corp., AP9973GI Datasheet - Page 4

• Manufacturer Part Number: AP9973GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GI

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 14
• Pd(w): 25
• Configuration: Single N
• Package: TO-220CFM

AP9973GI
100
0.1
10
12
10
1
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
90%
Single Pulse
10%
I
V
T
V
D
DS
C
GS
= 9 A
=25
V
DS
o
Q
V
C
4
t
, Drain-to-Source Voltage (V)
d(on)
DS
G
V
, Total Gate Charge (nC)
=30V
DS
1
V
=38V
t
DS
r
=48V
8
10
t
d(off)
12
t
f
100ms
100us
10ms
1ms
DC
1s
16
100
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
G
Single Pulse
0.05
0.0001
5
0.1
0.31
0.2
Duty factor=0.5
V
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
G
Charge
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
x R
1
25
thjc
t
Q
C
+ T
Q
C
C
rr
rss
C
rr
iss
oss
10
29
4