AP15P10GS Advanced Power Electronics Corp., AP15P10GS Datasheet
AP15P10GS
Specifications of AP15P10GS
Related parts for AP15P10GS
AP15P10GS Summary of contents
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... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP15P10GS/P RoHS-compliant Product BV -100V DSS R 230mΩ DS(ON) I -15A TO-263( TO-220(P) ...
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... AP15P10GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 10V G ℃ 1.9 1.4 0.9 0.4 10 -50 Fig 4. Normalized On-Resistance 1.5 o =25 C 1.1 j 0.7 0.3 -50 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP15P10GS/P o -10V C -7.0V -5.0V -4. . Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
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... AP15P10GS - -80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 10 V =-5V DS ...