AP15P10GS Advanced Power Electronics Corp., AP15P10GS Datasheet - Page 4

• Manufacturer Part Number: AP15P10GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP15P10GS

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 230
• Qg (nc): 37
• Qgs (nc): 5
• Qgd (nc): 15
• Id(a): -15
• Pd(w): 96
• Configuration: Single P
• Package: TO-263

AP15P10GS/P
100
0.1
10
10
12
10
1
8
6
4
2
0
8
6
4
2
0
1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Operation in this area
Fig 9. Maximum Safe Operating Area
limited by R
Single Pulse
V
T
DS
V
C
-V
I
=25
DS
=-5V
DS(ON)
D
-V
DS
= -9A
= -80V
Q
GS
o
, Drain-to-Source Voltage (V)
C
10
G
2
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
T
10
j
=25
o
C
20
4
100
T
j
30
=150
6
100ms
100us
10ms
1ms
DC
o
C
1000
40
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
-10V
Duty factor=0.5
V
0.02
0.05
0.01
Single Pulse
0.2
0.1
G
5
-V
0.0001
DS
Q
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
0.1
DM
T
x R
25
thjc
C
C
+ T
C
Q
rss
iss
C
oss
29
1
4