AP75T12GP-HF Advanced Power Electronics Corp., AP75T12GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP75T12GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP75T12GP-HF

• Vds: 120V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 15
• Qg (nc): 60
• Qgs (nc): 8.5
• Qgd (nc): 27
• Id(a): 60
• Pd(w): 138
• Configuration: Single N
• Package: TO-220

AP75T12GP-HF
1000
100
10
12
10
1
8
6
4
2
0
0.1
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
T
Single Pulse
limited by R
10%
90%
V
c
V
=25
DS
GS
V
DS(ON)
o
DS
C
Q
20
1
, Drain-to-Source Voltage (V)
G
t
V
I
d(on)
, Total Gate Charge (nC)
D
DS
= 30 A
=96V
t
r
10
40
t
d(off)
100
60
100us
1ms
10ms
100ms
DC
t
f
1000
80
Fig 10. Effective Transient Thermal Impedance
5000
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.1
0.2
0.05
0.01
0.02
V
Single Pulse
G
Duty factor=0.5
5
0.0001
Q
V
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
C
C
C
C
oxx
iss
rss
1
29
4