74ABT126D,602 NXP Semiconductors, 74ABT126D,602 Datasheet

IC BUFF TRI-ST QD N-INV 14SOIC

74ABT126D,602

Manufacturer Part Number
74ABT126D,602
Description
IC BUFF TRI-ST QD N-INV 14SOIC
Manufacturer
NXP Semiconductors
Series
74ABTr
Datasheet

Specifications of 74ABT126D,602

Package / Case
14-SOIC (3.9mm Width), 14-SOL
Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
4
Number Of Bits Per Element
1
Current - Output High, Low
32mA, 64mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Logic Family
ABT
Number Of Channels Per Chip
4
Polarity
Non-Inverting
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
High Level Output Current
- 32 mA
Input Bias Current (max)
15000 uA
Low Level Output Current
64 mA
Minimum Operating Temperature
- 40 C
Output Type
3-State
Propagation Delay Time
4.3 ns @ 5 V
Number Of Lines (input / Output)
4 / 4
Logical Function
Buffer/Line Driver
Number Of Elements
4
Number Of Channels
4
Number Of Inputs
4
Number Of Outputs
4
Operating Supply Voltage (typ)
5V
Package Type
SO
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Quiescent Current
15mA
Technology
BiCMOS
Pin Count
14
Mounting
Surface Mount
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4535-5
74ABT126D
74ABT126D
935053090602
1. General description
2. Features
3. Quick reference data
The 74ABT126 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive.
The 74ABT126 device is a quad buffer that is ideal for driving bus lines. The device
features four output enable inputs (nOE each controlling one of the 3-state outputs (nY).
Table 1:
T
Symbol Parameter
t
t
C
C
I
PLH
PHL
CC
amb
I
O
74ABT126
Quad buffer; 3-state
Rev. 04 — 17 February 2005
Quad bus interface
3-state buffers
Live insertion and extraction permitted
Output capability: +64 mA and 32 mA
Inputs are disabled during 3-state mode
Power-up 3-state
Latch-up protection:
ESD protection:
= 25 C; GND = 0 V.
JESD78: exceeds 500 mA
MIL STD 883 method 3015: exceeds 2000 V
Machine model: exceeds 200 V
propagation delay nA to nY C
propagation delay nA to nY C
input capacitance
output capacitance
quiescent supply current
Quick reference data
Conditions
V
outputs disabled;
V
outputs 3-state;
V
I
O
CC
L
L
= 0 V or V
= 50 pF; V
= 50 pF; V
= 0 V or V
= 5.5 V
CC
CC
CC
CC
= 5 V
= 5 V
Product data sheet
Min
-
-
-
-
-
Typ
2.9
3.0
4
7
65
Max
-
-
-
-
-
Unit
ns
ns
pF
pF
A

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74ABT126D,602 Summary of contents

Page 1

Quad buffer; 3-state Rev. 04 — 17 February 2005 1. General description The 74ABT126 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT126 device is a quad buffer that ...

Page 2

Philips Semiconductors 4. Ordering information Table 2: Ordering information Type number Package Temperature range 74ABT126D +85 C 74ABT126DB +85 C 74ABT126PW + Functional diagram Fig 1. Logic symbol 6. ...

Page 3

Philips Semiconductors 6.2 Pin description Table 3: Symbol 1OE 1A 1Y 2OE 2A 2Y GND 3Y 3A 3OE 4Y 4A 4OE Functional description 7.1 Function table Table 4: Input nOE [ HIGH ...

Page 4

Philips Semiconductors 8. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol ...

Page 5

Philips Semiconductors 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V input clamp voltage IK V HIGH-level output voltage OH V ...

Page 6

Philips Semiconductors Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current LI I power-off leakage current ...

Page 7

Philips Semiconductors 11. Dynamic characteristics Table 8: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter 5.0 V amb CC t propagation delay ...

Page 8

Philips Semiconductors 12. Waveforms Fig 4. Propagation delay input (nA) to output (nY) Fig 5. Enable and disable times of 3-state outputs 9397 750 14597 Product data sheet input GND t PLH output V ...

Page 9

Philips Semiconductors a. Input pulse definition b. Test circuit Fig 6. Load circuitry for switching times Table 9: Input V I 3.0 V 9397 750 14597 Product data sheet negative V M pulse ...

Page 10

Philips Semiconductors 13. Package outline SO14: plastic small outline package; 14 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT ...

Page 11

Philips Semiconductors SSOP14: plastic shrink small outline package; 14 leads; body width 5 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) A UNIT max. 0.21 1.80 mm ...

Page 12

Philips Semiconductors TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 ...

Page 13

Philips Semiconductors 14. Revision history Table 10: Revision history Document ID Release date 74ABT126_4 20050217 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 14

Philips Semiconductors 15. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 15

Philips Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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