SKM900GA12E4 SEMIKRON, SKM900GA12E4 Datasheet
Home Special Offers On Request SEMIKRON SKM900GA12E4
Manufacturer Part Number
SKM900GA12E4
Specifications of SKM900GA12E4
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
900
Chip-type
IGBT 4 (Trench)
Available stocks
Part Number:
SKM900GA12E4 HD
SKM900GA12E4
IGBT4 Modules
SKM900GA12E4
Target Data
Features
• V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at f
Remarks
• Case temperature limited to
© by SEMIKRON
SEMITRANS
T
T
rel. results valid for T
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
c
op
CE(sat)
= 125°C max, recomm.
= -40 ... +150°C, product
with positive temperature
GA
j
®
= 150°
sw
4
up to 20 kHz
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 10.05.2010
T
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
80 °C
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 25 °C
= 175 °C
= 175 °C
= 900 A
= 25 °C
= 900 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 0.5 Ω
= 0.5 Ω
= 9000 A/µs
= 4500 A/µs
CE
, I
Fnom
Cnom
C
= 32.8 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1311
1007
2700
2700
3520
4000
5100
typ.
54.4
3.52
900
871
651
900
500
200
100
620
110
115
1.8
2.2
0.8
0.7
1.1
1.7
5.8
0.1
0.9
10
80
3
0.035
max.
2.1
2.4
0.9
0.8
1.3
1.8
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
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SKM900GA12E4 Summary of contents
... SKM900GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM900GA12E4 Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...
... SKM900GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM900GA12E4 Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...
... SKM900GA12E4 SEMITRANS 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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