SKM900GA12E4 SEMIKRON, SKM900GA12E4 Datasheet - Page 2

• Manufacturer Part Number: SKM900GA12E4
• Manufacturer: SEMIKRON

Specifications of SKM900GA12E4

• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 900
• Chip-type: IGBT 4 (Trench)
• Case: SEMITRANS 4

SKM900GA12E4
IGBT4 Modules
SKM900GA12E4
Target Data
Features
• V
• High short circuit capability, self
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at f
Remarks
• Case temperature limited to
2
SEMITRANS
T
T
rel. results valid for T
coefficient
limiting to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
c
op
CE(sat)
= 125°C max, recomm.
= -40 ... +150°C, product
with positive temperature
GA
j
®
= 150°
sw
4
up to 20 kHz
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
F
RRM
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
rr
s
t
= V
EC
Rev. 0 – 10.05.2010
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
per module
to heat sink M6
F
F
GE
GE
CC
= 900 A
= 900 A
off
= 0 V
= ±15 V
= 600 V
= 9000 A/µs
T
T
T
T
T
T
T
T
T
T
T
to terminals M6,
M4
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
typ.
2.31
2.31
0.18
0.22
0.02
850
140
1.3
0.9
1.1
1.6
65
15
© by SEMIKRON
0.038
max.
2.65
2.64
0.07
330
1.5
1.1
1.3
1.7
20
5
5
Unit
K/W
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
V
V
V
V
A
g