SEMiX353GB126HDs SEMIKRON, SEMiX353GB126HDs Datasheet
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Manufacturer Part Number
SEMiX353GB126HDs
Specifications of SEMiX353GB126HDs
Family/system
SEMiX
Voltage (v)
1200
Current (a)
225
Chip-type
IGBT 3 (Trench)
Available stocks
Part Number:
SEMIX353GB126HDS
Part Number:
SEMIX353GB126HDS
Part Number:
SEMIX353GB126HDS
SEMiX353GB126HDs
Trench IGBT Modules
SEMiX353GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
• Not for new design
© by SEMIKRON
SEMiX
coefficient
max.
CE(sat)
with positive temperature
®
3s
GB
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
d(on)
r
d(off)
f
CE
CES
GES
j
j
stg
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 2 – 17.01.2012
T
T
V
V
V
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 25 °C
= 150 °C
= 150 °C
= 225 A
= 25 °C
= 225 A
=V
= 1200 V
= 25 V
= 600 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 2xI
= 2xI
≤ 1200 V
= 2
= 2
CE
= 80 °C
, I
Fnom
Cnom
C
= 9 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1200
1700
4000
1800
typ.
16.0
0.84
0.73
3.33
26.5
32.5
364
256
225
450
329
228
225
450
600
265
585
120
1.7
2.0
0.9
3.1
4.9
5.8
0.1
10
55
1
max.
2.45
2.1
1.2
1.1
4.0
6.0
6.5
0.3
0.1
Unit
Unit
K/W
m
m
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SEMiX353GB126HDs
SEMiX353GB126HDs Summary of contents
... SEMiX353GB126HDs SEMiX ® 3s Trench IGBT Modules SEMiX353GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...
... SEMiX353GB126HDs SEMiX ® 3s Trench IGBT Modules SEMiX353GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...
... SEMiX353GB126HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 17.01.2012 = ...
... SEMiX353GB126HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 17.01.2012 ...
... SEMiX353GB126HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...
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