SEMiX353GB126HDs SEMIKRON, SEMiX353GB126HDs Datasheet - Page 2

• Manufacturer Part Number: SEMiX353GB126HDs
• Manufacturer: SEMIKRON

Specifications of SEMiX353GB126HDs

• Family/system: SEMiX
• Voltage (v): 1200
• Current (a): 225
• Chip-type: IGBT 3 (Trench)
• Case: SEMiX 3s

SEMiX353GB126HDs
Trench IGBT Modules
SEMiX353GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
• Not for new design
2
SEMiX
coefficient
max.
CE(sat)
with positive temperature
®
3s
GB
C
=125°C
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
RRM
F
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
100
100/125
rr
s
t
= V
EC
Rev. 2 – 17.01.2012
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
F
F
GE
GE
CC
c
(T)
= 225 A
= 225 A
=100°C (R
=R
= 0 V
off
= -15 V
= 600 V
= 5600 A/µs
100
exp[B
25
=5 k)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
100
)]; T[K];
min.
0.9
0.7
2.2
3.1
2.5
3
493 ± 5%
3550
±2%
typ.
0.04
330
1.6
1.6
0.8
2.7
3.6
0.7
69
29
20
1
1
© by SEMIKRON
max.
1.80
0.17
300
1.8
1.1
0.9
3.1
4.0
5
5
Unit
K/W
K/W
m
m
m
m
Nm
Nm
Nm
µC
mJ
nH

V
V
V
V
A
K
g