IXGH56N60B3 IXYS, IXGH56N60B3 Datasheet - Page 5

• Manufacturer Part Number: IXGH56N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGH56N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 130
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 95
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.2
• Rthjc, Max, Igbt, (°c/w): 0.375
• Package Style: TO-247

© 2009 IXYS CORPORATION, All Rights Reserved
240
220
200
180
160
140
120
100
6
5
4
3
2
1
0
6
5
4
3
2
1
0
80
60
25
5
15
E
R
V
Fig. 16. Inductive Turn-off Switching Times vs.
off
G
CE
t
R
V
Fig. 12. Inductive Switching Energy Loss vs.
35
20
10
Fig. 14. Inductive Swiching Energy Loss vs.
f i
G
CE
= 5Ω
= 480V
= 5Ω , V
= 480V
25
,
45
15
V
GE
GE
30
E
on
= 15V
= 15V
t
55
d(off)
T
I
I
Junction Temperature
I
C
C
- - - -
J
20
C
35
= 36A
= 18A
- Degrees Centigrade
Collector Current
Gate Resistance
= 72A
- - - -
I
R
C
65
G
40
- Amperes
25
- Ohms
45
75
T
J
T
= 25ºC
30
J
= 125ºC
50
E
T
V
J
85
off
CE
= 125ºC , V
= 480V
35
55
95
I
C
60
= 72A
40
GE
E
105
I
on
= 15V
65
C
- - - -
= 36A
I
45
C
70
= 18A
115
75
50
125
300
280
260
240
220
200
180
160
140
120
6.5
5.5
4.5
3.5
2.5
1.5
0.5
6
5
4
3
2
1
0
240
220
200
180
160
140
120
100
6
5
4
3
2
1
0
210
190
170
150
130
110
90
70
15
Fig. 15. Inductive Turn-off Switching Times vs. Gate
25
5
E
R
V
20
off
CE
G
Fig. 17. Inductive Turn-off Switching Times vs.
t
R
V
t
T
V
f i
= 5Ω
CE
Fig. 13. Inductive Swiching Energy Loss vs.
f i
G
J
CE
= 480V
35
= 125ºC, V
10
= 5Ω , V
= 480V
= 480V
25
I
,
C
V
= 36A
GE
45
15
30
GE
E
= 15V
on
GE
t
d(off)
= 15V
t
d(off)
- - - -
= 15V
Junction Temperature
T
55
J
35
20
- - - -
Collector Current
- Degrees Centigrade
- - - -
Resistance
R
65
40
G
I
C
25
- Ohms
- Amperes
I
45
C
75
I
= 18A
C
IXGH56N60B3
30
= 18A, 36A, 72A
50
85
35
55
95
I
C
T
60
J
= 36A, 18A
40
= 125ºC
105
T
I
65
J
C
= 25ºC
= 72A
45
115
70
125
50
75
900
800
700
600
500
400
300
200
255
240
225
210
195
180
165
150
6
5
4
3
2
1
0