IXGH4N250C IXYS, IXGH4N250C Datasheet - Page 4
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IXGH4N250C
Manufacturer Part Number
IXGH4N250C
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet
1.IXGH4N250C.pdf
(4 pages)
Specifications of IXGH4N250C
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
13
Ic110, Tc=110°c, Igbt, (a)
4
Vce(sat), Max, Tj=25°c, Igbt, (v)
6
Tfi, Typ, Igbt, (ns)
29
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Tf, Typ, Igbt, (ns)
-
Rthjc, Max, Igbt, (k/w)
0.82
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
0.01
28
24
20
16
12
14
12
10
0.1
8
4
0
8
6
4
2
0
0.00001
250
1
0
T
R
dv / dt < 10V / ns
J
G
500
= 125ºC
= 20Ω
2
Fig. 9. Reverse-Bias Safe Operating Area
750
4
Fig. 7. Transconductance
1000
6
0.0001
I
C
1250
- Amperes
V
CE
8
- Volts
1500
10
1750
12
Fig. 11. Maximum Transient Thermal Impedance
T
0.001
J
= - 40ºC
2000
14
25ºC
125ºC
2250
16
Pulse Width - Seconds
2500
18
0.01
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
1
0
0
V
I
I
f
C
G
CE
5
= 1 MHz
= 4A
= 10mA
= 1000V
5
10
15
10
0.1
20
Fig. 10. Capacitance
Fig. 8. Gate Charge
Q
15
G
25
- NanoCoulombs
V
CE
30
20
- Volts
35
25
1
IXGH4N250C
IXGT4N250C
40
C ies
C oes
C res
45
30
IXYS REF: G_4N250C(4P) 5-13-11
50
35
55
10
60
40