CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 7
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CM800E6C-66H
Manufacturer Part Number
CM800E6C-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM800E6C-66H.pdf
(7 pages)
Specifications of CM800E6C-66H
Voltage
3300V
Current
800A
Circuit Configuration
Chopper
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM800E6C-66H
Manufacturer:
MIT
Quantity:
20 000
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2500
2000
1500
1000
500
0
0
REVERSE BIAS SAFE OPERATING AREA
V
T
CC
j
= 125 C, R
COLLECTOR-EMITTER VOLTAGE ( V )
2200V, V
1000
G(off)
GE
( RBSOA )
= +/-15V
2000
2.5
3000
4000
2500
2000
1500
1000
500
0
0
V
T
j
CC
RECOVERY SAFE OPERATING AREA
= 125 C
EMITTER-COLLECTOR VOLTAGE ( V )
FREE-WHEEL DIODE REVERSE
2200V, di/dt 3600A/ s
1000
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
( RRSOA )
2000
CM800E6C-66H
3000
INSULATED TYPE
4000
Jul. 2005