CM400HG-66H Powerex Inc, CM400HG-66H Datasheet

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CM400HG-66H

Manufacturer Part Number
CM400HG-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM400HG-66H

Prx Availability
RequestQuote
Voltage
3300V
Current
400A
Circuit Configuration
Single
Rohs Compliant
No
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
screwing depth
min. 4
21.6
0.3
5
E G
57
73
0.25
0.5
29.7
36
C
12.9
16.2
2
1
0.3
0.3
4 -
screwing depth
min. 16.5
7 MOUNTING HOLES
2 - M8 NUTS
I
V
High Insulated Type
1-element in a Pack
AISiC Baseplate
C ...................................................................
CES .......................................................
CM400HG-66H
(2) C
(1)
CIRCUIT DIAGRAM
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
22
E
0.3
LABEL
E
G
C
41
INSULATED TYPE
0.5
Dimensions in mm
17.4
2.8
3300V
0.3
Jul. 2005
400A

Related parts for CM400HG-66H

CM400HG-66H Summary of contents

Page 1

... OUTLINE DRAWING & CIRCUIT DIAGRAM 73 0.5 57 0.25 29 21.6 0.3 screwing depth min. 4 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... High Insulated Type 1-element in a Pack AISiC Baseplate NUTS ( (1) 1 CIRCUIT DIAGRAM ...

Page 2

... 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 400 (Note 1) 800 400 (Note 1) 800 4100 –40 ~ +150 –40 ~ +125 –40 ~ +125 ...

Page 3

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 30.0 K/kW — ...

Page 4

... 125 600 800 0 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

Page 5

... 125 C, Inductive load j 2 off 1 rec 0.5 0 600 800 0 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 400A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 400A C = 15V off E rec ...

Page 6

... MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V G(off ...

Page 7

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 1200 125 C j 1000 800 600 400 200 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 2200A/ s 1000 2000 3000 4000 Jul. 2005 ...

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