CM1200HG-66H Powerex Inc, CM1200HG-66H Datasheet

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CM1200HG-66H

Manufacturer Part Number
CM1200HG-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HG-66H

Prx Availability
RequestQuote
Voltage
3300V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1200HG-66H
Manufacturer:
MIT
Quantity:
20 000
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
screwing depth
min. 7.7
3 - M4 NUTS
57
0.25
6
5
14
0.3
E
61.2
190
57
G
0.5
0.25
0.5
12
59.2
4
3
61.2
0.3
0.5
0.5
57
C
0.25
2
1
8 -
screwing depth
min. 16.5
5 - M8 NUTS
7 MOUNTING HOLES
I
V
High Insulated Type
1-element in a Pack
AISiC Baseplate
C ................................................................
CES .......................................................
18
CM1200HG-66H
0.3
G
C
E
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
41
(6)
(5)
C
E
CIRCUIT DIAGRAM
0.5
LABEL
22
INSULATED TYPE
(4)
(3)
C
E
0.3
Dimensions in mm
(2)
(1)
C
E
1200A
3300V
Jul. 2005

Related parts for CM1200HG-66H

CM1200HG-66H Summary of contents

Page 1

... NUTS 14 59.2 0.3 0.5 61.2 61.2 0.5 12 0.3 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE I C ................................................................ V CES ....................................................... High Insulated Type 1-element in a Pack AISiC Baseplate NUTS 57 0. MOUNTING HOLES 18 0 ...

Page 2

... 1 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 1200 (Note 1) 2400 1200 (Note 1) 2400 12500 –40 ~ +150 –40 ~ +125 –40 ~ +125 ...

Page 3

... Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 10.0 K/kW — — ...

Page 4

... 125 2000 2400 0 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

Page 5

... 125 C, Inductive load off rec 1 0 2000 2400 0 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 1200A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 1200A C = 15V off ...

Page 6

... MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V 1.6 G(off) = 125 C, Inductive load ...

Page 7

... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 3000 125 C j 2500 2000 1500 1000 500 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 5400A/ s 1000 2000 3000 4000 Jul. 2005 ...

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